preliminary product description eds-101994 rev j 1 303 s. technology ct., broomfield, co 80021 phone: (800) smi-mmic http://www .sirenza.com the information provided herein is believed to be reliable at press time. sirenza microdevices assumes no responsibility for i naccuracies or omissions. sirenza microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user?s own risk. prices and specifications are subject to chang e without notice. no patent rights or licenses to any of the circuits described herein are implied or granted to any third party. sirenza microdevices does not authorize or warrant any sirenza microdevices product for use in lif e-support devices and/or systems. copyright 2001 sirenza microdevices, inc.. all worldwide rights reserved. cga-6618 CGA-6618Z pb rohs compliant & packag e green dual catv 1 mhz to 1000 mhz high linearity gaas hbt amplifier product features ? now available in lead free, rohs compliant, & green packaging ? excellent cso/ctb/xmod at +34 dbmv output power per tone ? dual devices in each soic-8 package simplify push-pull configuration pc board layout applications ? catv head end driver and predriver amplifier ? catv line driver amplifier sirenza microdevice?s cga-6618 is a high performance gaas hbt mmic amplifier. designed with the ingap process technol- ogy for excellent reliability. a darlington configuration is utilized for broadband performance. the heterojunction increases breakdown voltage and minimizes leakage current between junctions. the cga-6618 contains two amplifiers for use in wideband push-pull catv amplifiers requiring excellent second order performance. the second and third order non-linearities are greatly improved in the push pull configuration. the matte tin finish on sirenza?s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is rohs compliant per eu directive 2002/95. this package is also manu- factured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. symbol parameter freq.(mhz) min. typ. max. units g small signal gain 50 500 870 1000 12.4 12.0 13.8 14.1 13.4 13.0 14.4 14.0 db oip2 output second order intercept point tone spacing = 1 mhz, pout per tone = +6 dbm 50 250 500 70.0 76.5 77.5 72.0 dbm oip3 output third order intercept point tone spacing = 1 mhz, pout per tone = +6 dbm 50 500 870 38.0 38.0 39.0 40.0 dbm p1db output power at 1db gain compression 50 500 870 19.5 20.0 21.0 21.5 dbm irl input return loss 500 100-870 10 15.5 db o r l o utp ut r e turn l o ss 500 100-870 9.0 12.5 db nf noise figure balun insertion loss included 50 500 870 5.3 5.4 5.6 6.6 db cso worst case over band, 79 ch., flat, +34dbmv 81 dbc ctb worst case over band, 79 ch., flat, +34dbmv 70 dbc xmod worst case over band, 79 ch., flat, +34dbmv 63 dbc v d device operating voltage 4.8 5.1 5.4 v i d device operating current 144 160 176 ma r th (j-l ) thermal resistance (junction to lead) 35 c/w 1 2 3 4 8 7 6 5 amplifier configuration test conditions: v s = 8 v i d = 160 ma typ. r bias = 33 ohms t l = 25oc z s = z l = 75 ohms push pull application circuit electrical specifications
2 cga-6618 dual gaas hbt amplifier eds-101994 rev j 303 s. technology ct., broomfield, co 80021 phone: (800) smi-mmic htt p://www.sirenza.com absolute maximum ratings parameter absolute limit operation of this device beyond any one of these limits may cause permanent damage. for reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d < (t j - t l ) / r th , j-l max. device current (i d )240 ma max. device voltage (v d )7 v max. rf input power +20 dbm max. junction temp. (t j ) +150c operating temp. range (t l ) -40c to +85c max. storage temp. +150c gain vs. frequency 10 11 12 13 14 15 16 17 18 0 100 200 300 400 500 600 700 800 900 1000 frequency (mhz) gain (db) -40c +25c +85c typical rf performance: v s =8v, i d =160ma @ t l =+25c, r bias =33 ohms, push-pull config. 75 ohm push pull s-parameters are available for download at www.sirenza.com |s11| (db) vs. frequency -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 100 200 300 400 500 600 700 800 900 1000 frequency (mhz) |s11| (db) -40c +25c +85c |s22| (db) vs. frequency -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 100 200 300 400 500 600 700 800 900 1000 frequency (mhz) |s22| (db) -40c +25c +85c
3 cga-6618 dual gaas hbt amplifier eds-101994 rev j 303 s. technology ct., broomfield, co 80021 phone: (800) smi-mmic htt p://www.sirenza.com ctb/cso/xmod 34dbmv/chan., flat 40 50 60 70 80 90 100 0 50 100 150 200 250 300 350 400 450 500 550 600 freq. (mhz) dbc xmod ctb cso+ cso- third order intercept point vs. frequency over temperature 20 25 30 35 40 45 50 0 100 200 300 400 500 600 700 800 900 1000 freq. (mhz) ip3 (dbm) -40c +25c +85c second order intercept point vs. frequency over temperature 60 65 70 75 80 85 90 0 50 100 150 200 250 300 350 400 450 500 550 freq. (mhz) ip2 (dbm) -40c +25c +85c noise figure vs. frequency over temperature 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 100 200 300 400 500 600 700 800 900 1000 freq. (mhz) nf(db) -40c +25c +85 third harmonic vs. pout and freq. data shown is typical at 25c 40 50 60 70 80 90 100 0123456 pout (dbm) im3 (dbc) 66mhz 100mhz 250mhz 500mhz second harmonic vs. pout and freq. data shown is typical at 25c 40 50 60 70 80 90 100 0123456 pout (dbm) im2 (dbc) 66mhz 100mhz 250mhz 500mhz typical rf performance: v s =8v, i d =160ma @ t l =+25c, r bias =33 ohms, push-pull config.
4 cga-6618 dual gaas hbt amplifier eds-101994 rev j 303 s. technology ct., broomfield, co 80021 phone: (800) smi-mmic htt p://www.sirenza.com cso/ctb/xmod performance: v s =8v, i d =150ma @ t l =+25c, r bias =39 ohms, push-pull config, 79 ch. flat analog, no digital channels. push-pull cga-6618 ctb vs. pout and freq. 40 50 60 70 80 90 100 0 100 200 300 400 500 600 frequency (mhz) dbc 32dbmv 34dbmv 36dbmv 38dbmv 40dbmv 42dbmv push-pull cga-6618 xmod vs. pout and freq. 40 50 60 70 80 90 100 0 100 200 300 400 500 600 frequency (mhz) dbc 32dbmv 34dbmv 36dbmv 38dbmv 40dbmv 42dbmv push-pull cga-6618 cso- vs. pout and freq. 40 50 60 70 80 90 100 0 100 200 300 400 500 600 frequency (mhz) dbc 32dbmv 34dbmv 36dbmv 38dbmv 40dbmv 42dbmv push-pull cga-6618 cso+ vs. pout and freq. 40 50 60 70 80 90 100 0 100 200 300 400 500 600 frequency (mhz) dbc 32dbmv 34dbmv 36dbmv 38dbmv 40dbmv 42dbmv note: cso measurements > 85 dbc can be limited by system noise.
5 cga-6618 dual gaas hbt amplifier eds-101994 rev j 303 s. technology ct., broomfield, co 80021 phone: (800) smi-mmic htt p://www.sirenza.com gain & isolation vs. frequency 0 2 4 6 8 10 12 14 16 18 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) gain (db) -36 -32 -28 -24 -20 -16 -12 -8 -4 0 isolation (db) gain (db) isolation (db) |s11| & |s22| vs. frequency -40 -35 -30 -25 -20 -15 -10 -5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) db |s11| |s22| typical rf performance - single ended - 50 ohm system v s =8v, i d =80ma (one amp biased), t l =+25c, r bias =33 ohms gain & isolation vs. frequency 0 2 4 6 8 10 12 14 16 18 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) gain (db) -36 -32 -28 -24 -20 -16 -12 -8 -4 0 isolation (db) gain (db) isolation (db) typical rf performance - single ended - 37.5 ohm system v s =8v, i d =80ma (one amp biased), t l =+25c, r bias =33 ohms |s11| & |s22| vs. frequency -40 -35 -30 -25 -20 -15 -10 -5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) db |s11| |s22| 50 ohm and 37.5 ohm single ended s-parameter files are available for download at www.sirenza.com
6 cga-6618 dual gaas hbt amplifier eds-101994 rev j 303 s. technology ct., broomfield, co 80021 phone: (800) smi-mmic htt p://www.sirenza.com basic application schematic 50-870 mhz evaluation board layout 50-870 mhz 1 2 3 4 8 7 6 5 ecb-101611 rev a esop-8 push-pull eval board rf output rf input .01uf 1000pf 68pf 220nh 220nh 68pf 1000pf .01uf 1000pf 1000pf 1000pf 1000pf balun etc1-1-13 balun etc1-1-13 rbias rbias 1uf tant. 1uf tant. cga-6618 soic-08 1000 pf 0.01 f 1000pf 68pf v s r bias amp 1 1000 pf 1000 pf 1000 pf 220 nh macom etc1-1-13 macom etc1-1-13 1 f tant. 1 f tant. 0.01 f 1000pf 68pf 220 nh v s r bias amp 2 1 4 8 5 6,7 2,3 pcb recommendations 1. solder the copper pad on the backside of the device package to the ground plane. 2. use a large ground pad area with many plated through-holes as shown. 3. we recommend 1 or 2 ounce copper. measurement for this data sheet were made on a 31 mil thick fr-4 board with 1 ounce copper on both sides. cga-6618 CGA-6618Z recommended bias resistor values for i d =150ma r bias =2 ( v s -v d ) / i d supply voltage(v s ) 8 v 9 v 12 v 15 v r bias 33 47 82 120 note: r bias provides dc bias stability over temperature. part number reel size devices/reel cga-6618 7" 500 CGA-6618Z 7" 500 caution: esd sensitive appropriate precautions in handling, packaging and testing devices must be observed. part number ordering information part identification marking pin # function description device pin out 1 rf in device 1 rf input pin. this pin requires the use of an external dc blocking capacitor as shown in the schematic. 2,3,6,7 ground connection to ground. use via holes for best performance to reduce lead inductance as close to ground leads as possible. 4 rf in device 2 same as pin 1 5 rf out / vcc device 2 rf output and bias pin. bias should be supplied to this pin through an external series resistor and rf choke inductor. because dc biasing is present on this pin, a dc blocking capacitor should be used in most applications (see application schematic). the supply side of the bias network should be well bypassed. 8 rf out / vcc device 1 same as pin 5 epad ground exposed area on the bottom side of the package must be soldered to the ground plane of the board for proper thermal and rf performance. several vias should be located under the epad as shown in the recommended land pattern on page 5.
7 cga-6618 dual gaas hbt amplifier eds-101994 rev j 303 s. technology ct., broomfield, co 80021 phone: (800) smi-mmic htt p://www.sirenza.com return loss vs. frequency -30 -25 -20 -15 -10 -5 0 0 102030405060708090100 frequency (mhz) |s 11 | and |s 22 | (db) |s 11 | |s 22 | 5 - 100 mhz application circuit: v s =8v, i d =160ma @ t l =+25c, push-pull config. 5-100 mhz application schematic 5-100 mhz evaluation board layout cga-6618 soic-08 0.01 f 0.01 f 1000pf 68pf v s r bias amp 1 0.01 f 0.01 f 0.01 f 10 ? macom etc1-1t macom etc1-1t 1 f tant. 1 f tant. 0.01 f 1000pf 68pf 10 ? v s r bias amp 2 1 4 8 5 6,7 2,3 ecb-101611 rev a esop-8 push-pull eval board rf output rf input .01uf 1000pf 68pf 10uh 10uh 68pf 1000pf .01uf 0.01uf 0.01uf 0.01uf 0.01uf balun etc1-1t balun etc1-1t rbias rbias 1uf tant. 1uf tant. p1db and ip3 vs. frequency 16 17 18 19 20 21 22 0 102030405060708090100110 frequency (mhz) p1db (dbm) 34 35 36 37 38 39 40 ip3 (dbm) p1db ip3 noise figure vs. frequency 0 1 2 3 4 5 6 7 8 0 102030405060708090100110 frequency (mhz) nf (db) gain vs. frequency 6 8 10 12 14 16 0 102030405060708090100 frequency (mhz) |s 21 | (db)
8 cga-6618 dual gaas hbt amplifier eds-101994 rev j 303 s. technology ct., broomfield, co 80021 phone: (800) smi-mmic htt p://www.sirenza.com lot code cga6618 pcb pad layout dimensions in inches [millimeters] sized for 31 mil thick fr-4 nominal package dimensions & package marking dimensions in inches [millimeters] refer to package drawing posted at www.sirenza.com for tolerances. .088 [2.25] detail a . 0 6 1 [ 1 . 5 4 9 ] .155 [3.937] .025 .013 [.33] x 45 . 00 8 .003 [.076] s e a t i n g p l a n e 1 5 3 2 bottom view . 0 5 8 [ 1 . 4 7 3 ] top view side view e n d v i e w parting line . 0 0 8 [ . 2 0 3 ] 4 6 7 8 .194 [4.93] .061 [1.549] .016 [.406] .050 [1.27] .194 [4.928] 5 s e e d e t a i l a .236 [5.994] .155 [3.937] exposed pad .112 [2.85]
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